(SiC) Silicon Carbide wafers (A wide gap semiconductor material, 2-inch and 1cm x 1cm wafers are available)
Comopared with silicon based semiconductor devices, future semiconductor
devices produced with silicon carbide wafers have higer frequency performance
as well as better torelance in temparature and pressure values. |
| Polytype |
6H |
4H |
| Plane orientation |
｛0001｝ |
｛0001｝ |
| Dopant and surface |
N-type
Single side as polished |
N-type
Single side as polished |
| Wafer size |
Square 10x10mm |
Square 10x10mm |
| Wafer thickness |
500 um |
500 um |
| Resistivity |
0.03-0.12 Ohmcm |
0.03-0.12Ohmcm |
| Micropipe density |
<200 |
<200 |
| Edge exclusion |
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| Flatness orientation |
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(ZnO) Zinc Oxide wafers (A wide gap semiconductor material, 1cm x 1cm substrates are available)
Zinc Oxide is one of the potentially promised materials to produce echological
semiconductor devices. Currently we provide double-surface polished substrates
that sizes as 10mm x10mm x 0.5mm. |
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| Orientation |
{0001} Zn-plane, {000-1} O-plane +/-30′ |
| Material and surface |
Hydrothermally grown ZnO single crystal
Both surfaces, Zn and O-plane as polished |
| Wafer size |
Squared shape 10 x10 x0.5mm
(With flatness at two corners; 2.45mm and 3.96mm) |
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Ask us for more details. We support you using ZnO for your research.
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